RW1C015UNT2R - MOSFET N-CH 20V 1.5A WEMT6

Manufacturer Bilang Bahagi

RW1C015UNT2R

Internal Bilang Bahagi

AX-RW1C015UNT2R

tagagawa

Rohm Semiconductor

Maikling Paglalarawan

MOSFET N-CH 20V 1.5A WEMT6

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

2931700 Pieces

reference Presyo

~~USD 0.0957~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung RW1C015UNT2R sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa RW1C015UNT2R

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : RW1C015UNT2R

tagagawa : Rohm Semiconductor

paglalarawan : MOSFET N-CH 20V 1.5A WEMT6

serye : -

Katayuan ng Bahagi : Not For New Designs

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 20V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 1.5A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.5V, 4.5V

Rds On (Max) @ Id, Vgs : 180 mOhm @ 1.5A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 1.8nC @ 4.5V

Vgs (Max) : ±10V

Input Capacitance (Ciss) (Max) @ Vds : 110pF @ 10V

Tampok ng FET : -

Power Dissipation (Max) : 400mW (Ta)

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 6-WEMT

Pakete / Kaso : SOT-563, SOT-666

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : RW1C , RW1C01

Mga dokumento para sa RW1C015UNT2R

datasheets : RW1C015UNT2R.pdf

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