DMT10H017LPD-13 - MOSFET BVDSS 61V-100V POWERDI50

Manufacturer Bilang Bahagi

DMT10H017LPD-13

Internal Bilang Bahagi

AX-DMT10H017LPD-13

tagagawa

Diodes Incorporated

Maikling Paglalarawan

MOSFET BVDSS 61V-100V POWERDI50

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

569360 Pieces

reference Presyo

~~USD 0.492768~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung DMT10H017LPD-13 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa DMT10H017LPD-13

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : DMT10H017LPD-13

tagagawa : Diodes Incorporated

paglalarawan : MOSFET BVDSS 61V-100V POWERDI50

serye : Automotive, AEC-Q101

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual)

Tampok ng FET : Standard

Drain sa Source Voltage (Vdss) : 100V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 54.7A (Tc)

Rds On (Max) @ Id, Vgs : 17.4 mOhm @ 17A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 28.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 1986pF @ 50V

Kapangyarihan - Max : 2.2W (Ta), 78W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 8-PowerTDFN

Package ng Tagabigay ng Device : PowerDI5060-8

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : DMT10 , DMT10H0

Mga dokumento para sa DMT10H017LPD-13

datasheets : DMT10H017LPD-13.pdf

Kaugnay na mga produkto para sa DMT10H017LPD-13 Diodes Incorporated

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