RUC002N05HZGT116 - 1.2V DRIVE NCH MOSFET

Manufacturer Bilang Bahagi

RUC002N05HZGT116

Internal Bilang Bahagi

AX-RUC002N05HZGT116

tagagawa

Rohm Semiconductor

Maikling Paglalarawan

1.2V DRIVE NCH MOSFET

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

13553825 Pieces

reference Presyo

~~USD 0.0207~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung RUC002N05HZGT116 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa RUC002N05HZGT116

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : RUC002N05HZGT116

tagagawa : Rohm Semiconductor

paglalarawan : 1.2V DRIVE NCH MOSFET

serye : Automotive, AEC-Q101

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 50V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 200mA (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.2V, 4.5V

Rds On (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : 1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : -

Vgs (Max) : ±8V

Input Capacitance (Ciss) (Max) @ Vds : 25pF @ 10V

Tampok ng FET : -

Power Dissipation (Max) : 350mW (Ta)

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : SST3

Pakete / Kaso : TO-236-3, SC-59, SOT-23-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : RUC00 , RUC002N0

Mga dokumento para sa RUC002N05HZGT116

datasheets : RUC002N05HZGT116.pdf

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