IRFHM8363TR2PBF - MOSFET 2N-CH 30V 11A 8PQFN

Manufacturer Bilang Bahagi

IRFHM8363TR2PBF

Internal Bilang Bahagi

AX-IRFHM8363TR2PBF

tagagawa

Infineon Technologies

Maikling Paglalarawan

MOSFET 2N-CH 30V 11A 8PQFN

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

28035 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung IRFHM8363TR2PBF sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa IRFHM8363TR2PBF

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : IRFHM8363TR2PBF

tagagawa : Infineon Technologies

paglalarawan : MOSFET 2N-CH 30V 11A 8PQFN

serye : HEXFET®

Katayuan ng Bahagi : Obsolete

Uri ng FET : 2 N-Channel (Dual)

Tampok ng FET : Logic Level Gate

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 11A

Rds On (Max) @ Id, Vgs : 14.9 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 1165pF @ 10V

Kapangyarihan - Max : 2.7W

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 8-PowerVDFN

Package ng Tagabigay ng Device : 8-PQFN (3.3x3.3), Power33

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : IRFHM , IRFHM83

Mga dokumento para sa IRFHM8363TR2PBF

datasheets : IRFHM8363TR2PBF.pdf

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