SI3812DV-T1-GE3 - MOSFET N-CH 20V 2A 6-TSOP

Manufacturer Bilang Bahagi

SI3812DV-T1-GE3

Internal Bilang Bahagi

AX-SI3812DV-T1-GE3

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET N-CH 20V 2A 6-TSOP

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

11344 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung SI3812DV-T1-GE3 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SI3812DV-T1-GE3

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SI3812DV-T1-GE3

tagagawa : Vishay Siliconix

paglalarawan : MOSFET N-CH 20V 2A 6-TSOP

serye : LITTLE FOOT®

Katayuan ng Bahagi : Obsolete

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 20V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 2A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 125 mOhm @ 2.4A, 4.5V

Vgs (th) (Max) @ Id : 600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs : 4nC @ 4.5V

Vgs (Max) : ±12V

Input Capacitance (Ciss) (Max) @ Vds : -

Tampok ng FET : Schottky Diode (Isolated)

Power Dissipation (Max) : 830mW (Ta)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 6-TSOP

Pakete / Kaso : SOT-23-6 Thin, TSOT-23-6

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SI381 , SI3812D

Mga dokumento para sa SI3812DV-T1-GE3

datasheets : SI3812DV-T1-GE3.pdf

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