HAT2165H-EL-E - MOSFET N-CH 30V 55A LFPAK

Manufacturer Bilang Bahagi

HAT2165H-EL-E

Internal Bilang Bahagi

AX-HAT2165H-EL-E

tagagawa

Renesas Electronics America

Maikling Paglalarawan

MOSFET N-CH 30V 55A LFPAK

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

367030 Pieces

reference Presyo

~~USD 0.7644~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung HAT2165H-EL-E sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa HAT2165H-EL-E

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : HAT2165H-EL-E

tagagawa : Renesas Electronics America

paglalarawan : MOSFET N-CH 30V 55A LFPAK

serye : -

Katayuan ng Bahagi : Not For New Designs

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 55A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 3.3 mOhm @ 27.5A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 33nC @ 4.5V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 5180pF @ 10V

Tampok ng FET : -

Power Dissipation (Max) : 30W (Tc)

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : LFPAK

Pakete / Kaso : SC-100, SOT-669

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : HAT2 , HAT216

Mga dokumento para sa HAT2165H-EL-E

datasheets : HAT2165H-EL-E.pdf

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