CDBJFSC5650-G - DIODE SILICON CARBIDE POWER SCHO

Manufacturer Bilang Bahagi
Internal Bilang Bahagi
Maikling Paglalarawan
DIODE SILICON CARBIDE POWER SCHO
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
149870 Pieces
reference Presyo
USD 1.872
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung CDBJFSC5650-G sa stock para ibenta.
Pagpapadala pagpipilian at pagpapadala ng oras:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Mga Pagpipilian sa Pagbabayad:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Mismong para sa CDBJFSC5650-G

Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi : CDBJFSC5650-G
tagagawa : Comchip Technology
paglalarawan : DIODE SILICON CARBIDE POWER SCHO
serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Silicon Carbide Schottky
Boltahe - DC Reverse (Vr) (Max) : 650V
Kasalukuyang - Average na Rectified (Io) : 5A (DC)
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.7V @ 5A
Bilis : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Kasalukuyang - Reverse Leakage @ Vr : 100µA @ 650V
Capacitance @ Vr, F : 430pF @ 0V, 1MHz
Uri ng Pag-mount : Through Hole
Pakete / Kaso : TO-220-2 Full Pack
Package ng Tagabigay ng Device : TO-220F
Operating temperatura - Junction : -55°C ~ 175°C
timbang : -
kalagayan : Bago at orihinal na
Mga Kaugnay na Link : CDBJ , CDBJFS

Mga dokumento para sa CDBJFSC5650-G

datasheets : CDBJFSC5650-G.pdf

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