TK6A55DA(STA4,Q,M) - MOSFET N-CH 550V 5.5A TO-220SIS

Manufacturer Bilang Bahagi

TK6A55DA(STA4,Q,M)

Internal Bilang Bahagi

AX-TK6A55DA(STA4,Q,M)

tagagawa

Toshiba Semiconductor and Storage

Maikling Paglalarawan

MOSFET N-CH 550V 5.5A TO-220SIS

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

388375 Pieces

reference Presyo

~~USD 0.7224~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung TK6A55DA(STA4,Q,M) sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa TK6A55DA(STA4,Q,M)

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : TK6A55DA(STA4,Q,M)

tagagawa : Toshiba Semiconductor and Storage

paglalarawan : MOSFET N-CH 550V 5.5A TO-220SIS

serye : π-MOSVII

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 550V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 5.5A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1.48 Ohm @ 2.8A, 10V

Vgs (th) (Max) @ Id : 4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 35W (Tc)

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-220SIS

Pakete / Kaso : TO-220-3 Full Pack

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : TK6A55 , TK6A55DA(

Mga dokumento para sa TK6A55DA(STA4,Q,M)

datasheets : TK6A55DA(STA4,Q,M).pdf

Kaugnay na mga produkto para sa TK6A55DA(STA4,Q,M) Toshiba Semiconductor and Storage

Bilang bahagi	tatak	paglalarawan
CDR35BP103BKUSAR	Vishay Vitramon	CAP CER 10000PF 100V BP 1825.
CDR01BX102BKZSAT	Vishay Vitramon	CAP CER 1000PF 100V 10 BX 0805.
WF110250WJ47238BJ1	Vishay Beyschlag	CAP CER 4700PF 14KV SCREW.
WF165270WL76238BJ1	Vishay Beyschlag	CAP CER 7600PF 16KV SCREW.
WI106266WP40236BJ1	Vishay Beyschlag	CAP CER 4000PF 20KV SCREW.
WZ125178BH30236BJ1	Vishay Beyschlag	CAP CER 3000PF 10KV.
WI085215WJ10238BH1	Vishay Beyschlag	CAP CER 1000PF 14KV SCREW.
PEF220WH10338BK1	Vishay Beyschlag	CAP CER 10000PF 13KV R230 DISK.
WF095220WF50238BJ1	Vishay Beyschlag	CAP CER 5000PF 12KV SCREW.
WF125300WJ76238BJ1	Vishay Beyschlag	CAP CER 7600PF 14KV SCREW.
TF170311WW40236BJ1	Vishay Beyschlag	CAP CER 4000PF 32KV R85.
WF165380WQ75238BJ1	Vishay Beyschlag	CAP CER 7500PF 22.5KV SCREW.
WX110250WJ47238BJ1	Vishay Beyschlag	CAP CER 4700PF 14KV SCREW.
WI106266WP40236BJ2	Vishay Beyschlag	CAP CER 4000PF 20KV SCREW.
WF165336WP76238BJ1	Vishay Beyschlag	CAP CER 7600PF 20KV SCREW.
FPE210WV15236BJ1	Vishay Beyschlag	CAP CER 1500PF 30KV R85 AXIAL.
PZ0140WL10136CB1	Vishay Beyschlag	CAP CER 100PF 16KV DISK.
VJ0603Q3R3CEAAO	Vishay Vitramon	CAP CER 3.3PF 50V C0G/NP0 0603.
WI140316WQ75236BJ3	Vishay Beyschlag	CAP CER 7500PF 22.5KV SCREW.
PEF220BJ70238BK1	Vishay Beyschlag	CAP CER 7000PF 15KV R230 DISK.