IRF7807VD2TR - MOSFET N-CH 30V 8.3A 8-SOIC

Manufacturer Bilang Bahagi
Internal Bilang Bahagi
Maikling Paglalarawan
MOSFET N-CH 30V 8.3A 8-SOIC
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
65275 Pieces
reference Presyo
USD 0
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung IRF7807VD2TR sa stock para ibenta.
Pagpapadala pagpipilian at pagpapadala ng oras:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Mga Pagpipilian sa Pagbabayad:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Mismong para sa IRF7807VD2TR

Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi : IRF7807VD2TR
tagagawa : Infineon Technologies
paglalarawan : MOSFET N-CH 30V 8.3A 8-SOIC
serye : FETKY™
Katayuan ng Bahagi : Obsolete
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 8.3A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 7A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : -
Tampok ng FET : Schottky Diode (Isolated)
Power Dissipation (Max) : 2.5W (Ta)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : 8-SO
Pakete / Kaso : 8-SOIC (0.154", 3.90mm Width)
timbang : -
kalagayan : Bago at orihinal na
Mga Kaugnay na Link : IRF7 , IRF780

Mga dokumento para sa IRF7807VD2TR

datasheets : IRF7807VD2TR.pdf

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