RDN080N25FU6 - MOSFET N-CH 250V 8A TO220FN

Manufacturer Bilang Bahagi

RDN080N25FU6

Internal Bilang Bahagi

AX-RDN080N25FU6

tagagawa

Rohm Semiconductor

Maikling Paglalarawan

MOSFET N-CH 250V 8A TO220FN

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

8072 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung RDN080N25FU6 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa RDN080N25FU6

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : RDN080N25FU6

tagagawa : Rohm Semiconductor

paglalarawan : MOSFET N-CH 250V 8A TO220FN

serye : -

Katayuan ng Bahagi : Obsolete

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 250V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 8A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 500 mOhm @ 4A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 543pF @ 10V

Tampok ng FET : -

Power Dissipation (Max) : 35W (Tc)

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-220FN

Pakete / Kaso : TO-220-3 Full Pack

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : RDN0 , RDN080

Mga dokumento para sa RDN080N25FU6

datasheets : RDN080N25FU6.pdf

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