FF8MR12W2M1B11BOMA1 - MOSFET MODULE 1200V 150A

Manufacturer Bilang Bahagi

FF8MR12W2M1B11BOMA1

Internal Bilang Bahagi

AX-FF8MR12W2M1B11BOMA1

tagagawa

Infineon Technologies

Maikling Paglalarawan

MOSFET MODULE 1200V 150A

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

9300 Pieces

reference Presyo

~~USD 147.258~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung FF8MR12W2M1B11BOMA1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa FF8MR12W2M1B11BOMA1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : FF8MR12W2M1B11BOMA1

tagagawa : Infineon Technologies

paglalarawan : MOSFET MODULE 1200V 150A

serye : CoolSiC™

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual)

Tampok ng FET : Silicon Carbide (SiC)

Drain sa Source Voltage (Vdss) : 1200V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 150A (Tj)

Rds On (Max) @ Id, Vgs : 7.5 mOhm @ 150A, 15V (Typ)

Vgs (th) (Max) @ Id : 5.55V @ 60mA

Gate Charge (Qg) (Max) @ Vgs : 372nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds : 11000pF @ 800V

Kapangyarihan - Max : 20mW (Tc)

Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)

Uri ng Pag-mount : Chassis Mount

Pakete / Kaso : Module

Package ng Tagabigay ng Device : AG-EASY2BM-2

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : FF8MR1 , FF8MR12W2

Mga dokumento para sa FF8MR12W2M1B11BOMA1

datasheets : FF8MR12W2M1B11BOMA1.pdf

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