NTJS3151PT1G - MOSFET P-CH 12V 2.7A SOT-363

Manufacturer Bilang Bahagi

NTJS3151PT1G

Internal Bilang Bahagi

AX-NTJS3151PT1G

tagagawa

ON Semiconductor

Maikling Paglalarawan

MOSFET P-CH 12V 2.7A SOT-363

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

4134455 Pieces

reference Presyo

~~USD 0.06786~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung NTJS3151PT1G sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa NTJS3151PT1G

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : NTJS3151PT1G

tagagawa : ON Semiconductor

paglalarawan : MOSFET P-CH 12V 2.7A SOT-363

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : P-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 12V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 2.7A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 60 mOhm @ 3.3A, 4.5V

Vgs (th) (Max) @ Id : 1.2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs : 8.6nC @ 4.5V

Vgs (Max) : ±12V

Input Capacitance (Ciss) (Max) @ Vds : 850pF @ 12V

Tampok ng FET : -

Power Dissipation (Max) : 625mW (Ta)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : SC-88/SC70-6/SOT-363

Pakete / Kaso : 6-TSSOP, SC-88, SOT-363

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : NTJS , NTJS31

Mga dokumento para sa NTJS3151PT1G

datasheets : NTJS3151PT1G.pdf

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