IPD65R225C7ATMA1 - MOSFET N-CH 650V 11A TO252-3
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET N-CH 650V 11A TO252-3
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
416350 Pieces
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung IPD65R225C7ATMA1 sa stock para ibenta.
- Pagpapadala pagpipilian at pagpapadala ng oras:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Mga Pagpipilian sa Pagbabayad:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Mismong para sa IPD65R225C7ATMA1
Garantisado ang kalidad :
365 araw na warranty
stock Resource :
Franchised Distributor / Tagagawa Direct
Bansang pinagmulan :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi :
IPD65R225C7ATMA1
tagagawa :
Infineon Technologies
paglalarawan :
MOSFET N-CH 650V 11A TO252-3
serye :
CoolMOS™ C7
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
225 mOhm @ 4.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
996pF @ 400V
Tampok ng FET :
-
Power Dissipation (Max) :
63W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TO252-3
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
timbang :
-
kalagayan :
Bago at orihinal na
Mga dokumento para sa IPD65R225C7ATMA1
datasheets :
IPD65R225C7ATMA1.pdf
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