DMN3730UFB4-7B - MOSFET BVDSS 25V-30V X1-DFN1006

Manufacturer Bilang Bahagi

DMN3730UFB4-7B

Internal Bilang Bahagi

AX-DMN3730UFB4-7B

tagagawa

Diodes Incorporated

Maikling Paglalarawan

MOSFET BVDSS 25V-30V X1-DFN1006

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

7164190 Pieces

reference Presyo

~~USD 0.039162~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung DMN3730UFB4-7B sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa DMN3730UFB4-7B

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : DMN3730UFB4-7B

tagagawa : Diodes Incorporated

paglalarawan : MOSFET BVDSS 25V-30V X1-DFN1006

serye : Automotive, AEC-Q101

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 750mA (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 460 mOhm @ 200mA, 4.5V

Vgs (th) (Max) @ Id : 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 1.6nC @ 4.5V

Vgs (Max) : ±8V

Input Capacitance (Ciss) (Max) @ Vds : 64.3pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 470mW (Ta)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : X2-DFN1006-3

Pakete / Kaso : 3-XFDFN

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : DMN3 , DMN3730

Mga dokumento para sa DMN3730UFB4-7B

datasheets : DMN3730UFB4-7B.pdf

Kaugnay na mga produkto para sa DMN3730UFB4-7B Diodes Incorporated

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