CSD23201W10 - MOSFET P-CH 12V 2.2A 4DSBGA

Manufacturer Bilang Bahagi

CSD23201W10

Internal Bilang Bahagi

AX-CSD23201W10

tagagawa

Texas Instruments

Maikling Paglalarawan

MOSFET P-CH 12V 2.2A 4DSBGA

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

7200 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung CSD23201W10 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa CSD23201W10

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : CSD23201W10

tagagawa : Texas Instruments

paglalarawan : MOSFET P-CH 12V 2.2A 4DSBGA

serye : NexFET™

Katayuan ng Bahagi : Obsolete

Uri ng FET : P-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 12V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 2.2A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.5V, 4.5V

Rds On (Max) @ Id, Vgs : 82 mOhm @ 500mA, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 2.4nC @ 4.5V

Vgs (Max) : -6V

Input Capacitance (Ciss) (Max) @ Vds : 325pF @ 6V

Tampok ng FET : -

Power Dissipation (Max) : 1W (Ta)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 4-DSBGA (1x1)

Pakete / Kaso : 4-UFBGA, DSBGA

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : CSD , CSD23

Mga dokumento para sa CSD23201W10

datasheets : CSD23201W10.pdf

Kaugnay na mga produkto para sa CSD23201W10 Texas Instruments

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