SI4435DDY-T1-E3 - MOSFET P-CH 30V 11.4A 8SOIC

Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET P-CH 30V 11.4A 8SOIC
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
1451960 Pieces
reference Presyo
USD 0.19323
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung SI4435DDY-T1-E3 sa stock para ibenta.
Pagpapadala pagpipilian at pagpapadala ng oras:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Mga Pagpipilian sa Pagbabayad:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Mismong para sa SI4435DDY-T1-E3

Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi : SI4435DDY-T1-E3
tagagawa : Vishay Siliconix
paglalarawan : MOSFET P-CH 30V 11.4A 8SOIC
serye : TrenchFET®
Katayuan ng Bahagi : Active
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 11.4A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 24 mOhm @ 9.1A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 15V
Tampok ng FET : -
Power Dissipation (Max) : 2.5W (Ta), 5W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : 8-SO
Pakete / Kaso : 8-SOIC (0.154", 3.90mm Width)
timbang : -
kalagayan : Bago at orihinal na
Mga Kaugnay na Link : SI443 , SI4435D

Mga dokumento para sa SI4435DDY-T1-E3

datasheets : SI4435DDY-T1-E3.pdf

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