IPAN65R650CEXKSA1 - MOSFET NCH 650V 10.1A TO220-3

Manufacturer Bilang Bahagi

IPAN65R650CEXKSA1

Internal Bilang Bahagi

AX-IPAN65R650CEXKSA1

tagagawa

Infineon Technologies

Maikling Paglalarawan

MOSFET NCH 650V 10.1A TO220-3

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

359690 Pieces

reference Presyo

~~USD 0.78~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung IPAN65R650CEXKSA1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa IPAN65R650CEXKSA1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : IPAN65R650CEXKSA1

tagagawa : Infineon Technologies

paglalarawan : MOSFET NCH 650V 10.1A TO220-3

serye : CoolMOS™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 650V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 10.1A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 650 mOhm @ 2.1A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 210µA

Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 440pF @ 100V

Tampok ng FET : Super Junction

Power Dissipation (Max) : 28W (Tc)

Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : PG-TO220 Full Pack

Pakete / Kaso : TO-220-3 Full Pack

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : IPAN6 , IPAN65R6

Mga dokumento para sa IPAN65R650CEXKSA1

datasheets : IPAN65R650CEXKSA1.pdf

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