C2M0160120D - MOSFET N-CH 1200V 19A TO-247

Manufacturer Bilang Bahagi

C2M0160120D

Internal Bilang Bahagi

AX-C2M0160120D

tagagawa

Cree/Wolfspeed

Maikling Paglalarawan

MOSFET N-CH 1200V 19A TO-247

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

53430 Pieces

reference Presyo

~~USD 5.25~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung C2M0160120D sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa C2M0160120D

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : C2M0160120D

tagagawa : Cree/Wolfspeed

paglalarawan : MOSFET N-CH 1200V 19A TO-247

serye : Z-FET™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : SiCFET (Silicon Carbide)

Drain sa Source Voltage (Vdss) : 1200V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 19A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 20V

Rds On (Max) @ Id, Vgs : 196 mOhm @ 10A, 20V

Vgs (th) (Max) @ Id : 2.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs : 32.6nC @ 20V

Vgs (Max) : +25V, -10V

Input Capacitance (Ciss) (Max) @ Vds : 527pF @ 800V

Tampok ng FET : -

Power Dissipation (Max) : 125W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-247-3

Pakete / Kaso : TO-247-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : C2M , C2M01

Mga dokumento para sa C2M0160120D

datasheets : C2M0160120D.pdf

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