IPD800N06NGBTMA1 - MOSFET N-CH 60V 16A TO-252
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET N-CH 60V 16A TO-252
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
51306 Pieces
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung IPD800N06NGBTMA1 sa stock para ibenta.
- Pagpapadala pagpipilian at pagpapadala ng oras:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Mga Pagpipilian sa Pagbabayad:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Mismong para sa IPD800N06NGBTMA1
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi : IPD800N06NGBTMA1
tagagawa : Infineon Technologies
paglalarawan : MOSFET N-CH 60V 16A TO-252
serye : OptiMOS™
Katayuan ng Bahagi : Obsolete
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 16A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 80 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id : 4V @ 16µA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 370pF @ 30V
Tampok ng FET : -
Power Dissipation (Max) : 47W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : PG-TO252-3
Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63
timbang : -
kalagayan : Bago at orihinal na
Mga dokumento para sa IPD800N06NGBTMA1
datasheets : IPD800N06NGBTMA1.pdf
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