DMT3011LDT-7 - MOSFET 2N-CH 30V 8A V-DFN3030-8

Manufacturer Bilang Bahagi

DMT3011LDT-7

Internal Bilang Bahagi

AX-DMT3011LDT-7

tagagawa

Diodes Incorporated

Maikling Paglalarawan

MOSFET 2N-CH 30V 8A V-DFN3030-8

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1157780 Pieces

reference Presyo

~~USD 0.242328~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung DMT3011LDT-7 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa DMT3011LDT-7

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : DMT3011LDT-7

tagagawa : Diodes Incorporated

paglalarawan : MOSFET 2N-CH 30V 8A V-DFN3030-8

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual) Asymmetrical

Tampok ng FET : Standard

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 8A, 10.7A

Rds On (Max) @ Id, Vgs : 20 mOhm @ 6A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 13.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 641pF @ 15V

Kapangyarihan - Max : 1.9W

Temperatura ng pagpapatakbo : -55°C ~ 155°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 8-VDFN Exposed Pad

Package ng Tagabigay ng Device : V-DFN3030-8 (Type K)

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : DMT3 , DMT301

Mga dokumento para sa DMT3011LDT-7

datasheets : DMT3011LDT-7.pdf

Kaugnay na mga produkto para sa DMT3011LDT-7 Diodes Incorporated

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