BSS806NEH6327XTSA1 - MOSFET N-CH 20V 2.3A SOT23

Manufacturer Bilang Bahagi

BSS806NEH6327XTSA1

Internal Bilang Bahagi

AX-BSS806NEH6327XTSA1

tagagawa

Infineon Technologies

Maikling Paglalarawan

MOSFET N-CH 20V 2.3A SOT23

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

4536345 Pieces

reference Presyo

~~USD 0.061848~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung BSS806NEH6327XTSA1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa BSS806NEH6327XTSA1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : BSS806NEH6327XTSA1

tagagawa : Infineon Technologies

paglalarawan : MOSFET N-CH 20V 2.3A SOT23

serye : Automotive, AEC-Q101, HEXFET®

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 20V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 2.3A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.8V, 2.5V

Rds On (Max) @ Id, Vgs : 57 mOhm @ 2.3A, 2.5V

Vgs (th) (Max) @ Id : 0.75V @ 11µA

Gate Charge (Qg) (Max) @ Vgs : 1.7nC @ 2.5V

Vgs (Max) : ±8V

Input Capacitance (Ciss) (Max) @ Vds : 529pF @ 10V

Tampok ng FET : -

Power Dissipation (Max) : 500mW (Ta)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : SOT-23-3

Pakete / Kaso : TO-236-3, SC-59, SOT-23-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : BSS806 , BSS806NEH

Mga dokumento para sa BSS806NEH6327XTSA1

datasheets : BSS806NEH6327XTSA1.pdf

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