BSO080P03NS3GXUMA1 - MOSFET P-CH 30V 12A 8DSO

Manufacturer Bilang Bahagi

BSO080P03NS3GXUMA1

Internal Bilang Bahagi

AX-BSO080P03NS3GXUMA1

tagagawa

Infineon Technologies

Maikling Paglalarawan

MOSFET P-CH 30V 12A 8DSO

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1104140 Pieces

reference Presyo

~~USD 0.2541~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung BSO080P03NS3GXUMA1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa BSO080P03NS3GXUMA1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : BSO080P03NS3GXUMA1

tagagawa : Infineon Technologies

paglalarawan : MOSFET P-CH 30V 12A 8DSO

serye : OptiMOS™

Katayuan ng Bahagi : Active

Uri ng FET : P-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 12A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 8 mOhm @ 14.8A, 10V

Vgs (th) (Max) @ Id : 3.1V @ 150µA

Gate Charge (Qg) (Max) @ Vgs : 81nC @ 10V

Vgs (Max) : ±25V

Input Capacitance (Ciss) (Max) @ Vds : 6750pF @ 15V

Tampok ng FET : -

Power Dissipation (Max) : 1.6W (Ta)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : PG-DSO-8

Pakete / Kaso : 8-SOIC (0.154", 3.90mm Width)

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : BSO080 , BSO080P03

Mga dokumento para sa BSO080P03NS3GXUMA1

datasheets : BSO080P03NS3GXUMA1.pdf

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