SCTWA50N120 - MOSFET N-CH 1200V 65A HIP247

Manufacturer Bilang Bahagi

SCTWA50N120

Internal Bilang Bahagi

AX-SCTWA50N120

tagagawa

STMicroelectronics

Maikling Paglalarawan

MOSFET N-CH 1200V 65A HIP247

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

22778 Pieces

reference Presyo

~~USD 17.2386~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung SCTWA50N120 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SCTWA50N120

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SCTWA50N120

tagagawa : STMicroelectronics

paglalarawan : MOSFET N-CH 1200V 65A HIP247

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : SiCFET (Silicon Carbide)

Drain sa Source Voltage (Vdss) : 1200V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 65A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 20V

Rds On (Max) @ Id, Vgs : 69 mOhm @ 40A, 20V

Vgs (th) (Max) @ Id : 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 122nC @ 20V

Vgs (Max) : +25V, -10V

Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 400V

Tampok ng FET : -

Power Dissipation (Max) : 318W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 200°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : HiP247™

Pakete / Kaso : TO-247-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SCT , SCTWA

Mga dokumento para sa SCTWA50N120

datasheets : SCTWA50N120.pdf

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