NP80N055NDG-S18-AY - MOSFET N-CH 55V 80A TO-262

Manufacturer Bilang Bahagi

NP80N055NDG-S18-AY

Internal Bilang Bahagi

AX-NP80N055NDG-S18-AY

tagagawa

Renesas Electronics America

Maikling Paglalarawan

MOSFET N-CH 55V 80A TO-262

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

12688 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung NP80N055NDG-S18-AY sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa NP80N055NDG-S18-AY

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : NP80N055NDG-S18-AY

tagagawa : Renesas Electronics America

paglalarawan : MOSFET N-CH 55V 80A TO-262

serye : -

Katayuan ng Bahagi : Obsolete

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 55V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 80A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 6.9 mOhm @ 40A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 135nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 6900pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 1.8W (Ta), 115W (Tc)

Temperatura ng pagpapatakbo : 175°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-262

Pakete / Kaso : TO-262-3 Long Leads, I²Pak, TO-262AA

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : NP80N0 , NP80N055N

Mga dokumento para sa NP80N055NDG-S18-AY

datasheets : NP80N055NDG-S18-AY.pdf

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