NVMFD5C650NLWFT1G - MOSFET 2N-CH 60V 111A S08FL

Manufacturer Bilang Bahagi

NVMFD5C650NLWFT1G

Internal Bilang Bahagi

AX-NVMFD5C650NLWFT1G

tagagawa

ON Semiconductor

Maikling Paglalarawan

MOSFET 2N-CH 60V 111A S08FL

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

389225 Pieces

reference Presyo

~~USD 0.72081~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung NVMFD5C650NLWFT1G sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa NVMFD5C650NLWFT1G

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : NVMFD5C650NLWFT1G

tagagawa : ON Semiconductor

paglalarawan : MOSFET 2N-CH 60V 111A S08FL

serye : Automotive, AEC-Q101

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual)

Tampok ng FET : Standard

Drain sa Source Voltage (Vdss) : 60V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 21A (Ta), 111A (Tc)

Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 98µA

Gate Charge (Qg) (Max) @ Vgs : 16nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds : 2546pF @ 25V

Kapangyarihan - Max : 3.5W (Ta), 125W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 8-PowerTDFN

Package ng Tagabigay ng Device : 8-DFN (5x6) Dual Flag (SO8FL-Dual)

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : NVMFD , NVMFD5C6

Mga dokumento para sa NVMFD5C650NLWFT1G

datasheets : NVMFD5C650NLWFT1G.pdf

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