FESB8JT-E3/81 - DIODE GEN PURP 600V 8A TO263AB

Manufacturer Bilang Bahagi
Internal Bilang Bahagi
Maikling Paglalarawan
DIODE GEN PURP 600V 8A TO263AB
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
565215 Pieces
reference Presyo
USD 0.49638
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung FESB8JT-E3/81 sa stock para ibenta.
Pagpapadala pagpipilian at pagpapadala ng oras:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Mga Pagpipilian sa Pagbabayad:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Mismong para sa FESB8JT-E3/81

Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi : FESB8JT-E3/81
tagagawa : Vishay Semiconductor Diodes Division
paglalarawan : DIODE GEN PURP 600V 8A TO263AB
serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 8A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.5V @ 8A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 600V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device : TO-263AB
Operating temperatura - Junction : -55°C ~ 150°C
timbang : -
kalagayan : Bago at orihinal na
Mga Kaugnay na Link : FESB , FESB8J

Mga dokumento para sa FESB8JT-E3/81

datasheets : FESB8JT-E3/81.pdf

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