FESB8JT-E3/81 - DIODE GEN PURP 600V 8A TO263AB

Manufacturer Bilang Bahagi

FESB8JT-E3/81

Internal Bilang Bahagi

AX-FESB8JT-E3/81

tagagawa

Vishay Semiconductor Diodes Division

Maikling Paglalarawan

DIODE GEN PURP 600V 8A TO263AB

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

565215 Pieces

reference Presyo

~~USD 0.49638~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung FESB8JT-E3/81 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa FESB8JT-E3/81

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : FESB8JT-E3/81

tagagawa : Vishay Semiconductor Diodes Division

paglalarawan : DIODE GEN PURP 600V 8A TO263AB

serye : -

Katayuan ng Bahagi : Active

Uri ng Diode : Standard

Boltahe - DC Reverse (Vr) (Max) : 600V

Kasalukuyang - Average na Rectified (Io) : 8A

Boltahe - Ipasa (Vf) (Max) @ Kung : 1.5V @ 8A

Bilis : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 50ns

Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 600V

Capacitance @ Vr, F : -

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Package ng Tagabigay ng Device : TO-263AB

Operating temperatura - Junction : -55°C ~ 150°C

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : FESB , FESB8J

Mga dokumento para sa FESB8JT-E3/81

datasheets : FESB8JT-E3/81.pdf

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