DMTH10H010SCT - MOSFET BVDSS 61V-100V TO220AB T

Manufacturer Bilang Bahagi

DMTH10H010SCT

Internal Bilang Bahagi

AX-DMTH10H010SCT

tagagawa

Diodes Incorporated

Maikling Paglalarawan

MOSFET BVDSS 61V-100V TO220AB T

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

343515 Pieces

reference Presyo

~~USD 0.81672~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung DMTH10H010SCT sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa DMTH10H010SCT

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : DMTH10H010SCT

tagagawa : Diodes Incorporated

paglalarawan : MOSFET BVDSS 61V-100V TO220AB T

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 100V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 100A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 9.5 mOhm @ 13A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 56.4nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 4468pF @ 50V

Tampok ng FET : -

Power Dissipation (Max) : 2.5W (Ta), 187W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-220AB

Pakete / Kaso : TO-220-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : DMTH , DMTH10

Mga dokumento para sa DMTH10H010SCT

datasheets : DMTH10H010SCT.pdf

Kaugnay na mga produkto para sa DMTH10H010SCT Diodes Incorporated

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