FDMS3660S - MOSFET 2N-CH 30V 13A/30A 8-PQFN

Manufacturer Bilang Bahagi

FDMS3660S

Internal Bilang Bahagi

AX-FDMS3660S

tagagawa

ON Semiconductor

Maikling Paglalarawan

MOSFET 2N-CH 30V 13A/30A 8-PQFN

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

897545 Pieces

reference Presyo

~~USD 0.312588~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung FDMS3660S sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa FDMS3660S

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : FDMS3660S

tagagawa : ON Semiconductor

paglalarawan : MOSFET 2N-CH 30V 13A/30A 8-PQFN

serye : PowerTrench®

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual) Asymmetrical

Tampok ng FET : Logic Level Gate

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 13A, 30A

Rds On (Max) @ Id, Vgs : 8 mOhm @ 13A, 10V

Vgs (th) (Max) @ Id : 2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 29nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 1765pF @ 15V

Kapangyarihan - Max : 1W

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 8-PowerTDFN

Package ng Tagabigay ng Device : Power56

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : FDM , FDMS

Mga dokumento para sa FDMS3660S

datasheets : FDMS3660S.pdf

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