E3M0065090D - E-SERIES 900V 65 MOHM G3 SIC M

Manufacturer Bilang Bahagi

E3M0065090D

Internal Bilang Bahagi

AX-E3M0065090D

tagagawa

Cree/Wolfspeed

Maikling Paglalarawan

E-SERIES 900V 65 MOHM G3 SIC M

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

46446 Pieces

reference Presyo

~~USD 7.248~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung E3M0065090D sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa E3M0065090D

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : E3M0065090D

tagagawa : Cree/Wolfspeed

paglalarawan : E-SERIES 900V 65 MOHM G3 SIC M

serye : Automotive, AEC-Q101, E

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : SiCFET (Silicon Carbide)

Drain sa Source Voltage (Vdss) : 900V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 35A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 15V

Rds On (Max) @ Id, Vgs : 84.5 mOhm @ 20A, 15V

Vgs (th) (Max) @ Id : 3.5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs : 30.4nC @ 15V

Vgs (Max) : +18V, -8V

Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 600V

Tampok ng FET : -

Power Dissipation (Max) : 125W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-247-3

Pakete / Kaso : TO-247-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : E3M , E3M00

Mga dokumento para sa E3M0065090D

datasheets : E3M0065090D.pdf

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