DMN2005UFG-13 - MOSFET N-CH 20V 18.1A POWERDI-8

Manufacturer Bilang Bahagi

DMN2005UFG-13

Internal Bilang Bahagi

AX-DMN2005UFG-13

tagagawa

Diodes Incorporated

Maikling Paglalarawan

MOSFET N-CH 20V 18.1A POWERDI-8

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1704600 Pieces

reference Presyo

~~USD 0.164592~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung DMN2005UFG-13 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa DMN2005UFG-13

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : DMN2005UFG-13

tagagawa : Diodes Incorporated

paglalarawan : MOSFET N-CH 20V 18.1A POWERDI-8

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 20V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 18.1A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 4.6 mOhm @ 13.5A, 4.5V

Vgs (th) (Max) @ Id : 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 164nC @ 10V

Vgs (Max) : ±12V

Input Capacitance (Ciss) (Max) @ Vds : 6495pF @ 10V

Tampok ng FET : -

Power Dissipation (Max) : 1.05W (Ta)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : PowerDI3333-8

Pakete / Kaso : 8-PowerWDFN

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : DMN2 , DMN200

Mga dokumento para sa DMN2005UFG-13

datasheets : DMN2005UFG-13.pdf

Kaugnay na mga produkto para sa DMN2005UFG-13 Diodes Incorporated

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