SI8819EDB-T2-E1 - MOSFET P-CH 12V 2.9A 4-MICROFOOT

Manufacturer Bilang Bahagi

SI8819EDB-T2-E1

Internal Bilang Bahagi

AX-SI8819EDB-T2-E1

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET P-CH 12V 2.9A 4-MICROFOOT

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

3623455 Pieces

reference Presyo

~~USD 0.07743~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung SI8819EDB-T2-E1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SI8819EDB-T2-E1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SI8819EDB-T2-E1

tagagawa : Vishay Siliconix

paglalarawan : MOSFET P-CH 12V 2.9A 4-MICROFOOT

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : P-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 12V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 2.9A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.5V, 3.7V

Rds On (Max) @ Id, Vgs : 80 mOhm @ 1.5A, 3.7V

Vgs (th) (Max) @ Id : 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 17nC @ 8V

Vgs (Max) : ±8V

Input Capacitance (Ciss) (Max) @ Vds : 650pF @ 6V

Tampok ng FET : -

Power Dissipation (Max) : 900mW (Ta)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 4-MICRO FOOT® (0.8x0.8)

Pakete / Kaso : 4-XFBGA

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SI881 , SI8819E

Mga dokumento para sa SI8819EDB-T2-E1

datasheets : SI8819EDB-T2-E1.pdf

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