IRFB3206GPBF - MOSFET N-CH 60V 120A TO220AB

Manufacturer Bilang Bahagi

IRFB3206GPBF

Internal Bilang Bahagi

AX-IRFB3206GPBF

tagagawa

Infineon Technologies

Maikling Paglalarawan

MOSFET N-CH 60V 120A TO220AB

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

148915 Pieces

reference Presyo

~~USD 1.884~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung IRFB3206GPBF sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa IRFB3206GPBF

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : IRFB3206GPBF

tagagawa : Infineon Technologies

paglalarawan : MOSFET N-CH 60V 120A TO220AB

serye : HEXFET®

Katayuan ng Bahagi : Not For New Designs

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 60V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 120A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 3 mOhm @ 75A, 10V

Vgs (th) (Max) @ Id : 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs : 170nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 6540pF @ 50V

Tampok ng FET : -

Power Dissipation (Max) : 300W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-220AB

Pakete / Kaso : TO-220-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : IRFB , IRFB32

Mga dokumento para sa IRFB3206GPBF

datasheets : IRFB3206GPBF.pdf

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