SIZ998DT-T1-GE3 - MOSFET 2 N-CH 30V 8-POWERPAIR

Manufacturer Bilang Bahagi

SIZ998DT-T1-GE3

Internal Bilang Bahagi

AX-SIZ998DT-T1-GE3

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET 2 N-CH 30V 8-POWERPAIR

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

682335 Pieces

reference Presyo

~~USD 0.41118~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung SIZ998DT-T1-GE3 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SIZ998DT-T1-GE3

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SIZ998DT-T1-GE3

tagagawa : Vishay Siliconix

paglalarawan : MOSFET 2 N-CH 30V 8-POWERPAIR

serye : TrenchFET®

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual), Schottky

Tampok ng FET : Standard

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 20A (Tc), 60A (Tc)

Rds On (Max) @ Id, Vgs : 6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 8.1nC @ 4.5V, 19.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds : 930pF @ 15V, 2620pF @ 15V

Kapangyarihan - Max : 20.2W, 32.9W

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 8-PowerWDFN

Package ng Tagabigay ng Device : 8-PowerPair®

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SIZ99 , SIZ998D

Mga dokumento para sa SIZ998DT-T1-GE3

datasheets : SIZ998DT-T1-GE3.pdf

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