HTNFET-D - MOSFET N-CH 55V 8-DIP

Manufacturer Bilang Bahagi

HTNFET-D

Internal Bilang Bahagi

AX-HTNFET-D

tagagawa

Honeywell Aerospace

Maikling Paglalarawan

MOSFET N-CH 55V 8-DIP

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

9150 Pieces

reference Presyo

~~USD 243.6~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung HTNFET-D sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa HTNFET-D

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : HTNFET-D

tagagawa : Honeywell Aerospace

paglalarawan : MOSFET N-CH 55V 8-DIP

serye : HTMOS™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 55V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : -

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 5V

Rds On (Max) @ Id, Vgs : 400 mOhm @ 100mA, 5V

Vgs (th) (Max) @ Id : 2.4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs : 4.3nC @ 5V

Vgs (Max) : 10V

Input Capacitance (Ciss) (Max) @ Vds : 290pF @ 28V

Tampok ng FET : -

Power Dissipation (Max) : 50W (Tj)

Temperatura ng pagpapatakbo : -55°C ~ 225°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : 8-CDIP-EP

Pakete / Kaso : 8-CDIP Exposed Pad

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : HT , HTNF

Mga dokumento para sa HTNFET-D

datasheets : HTNFET-D.pdf

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