JAN1N5807US - DIODE GEN PURP 50V 6A B-MELF
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
AX-JAN1N5807US
tagagawa
Maikling Paglalarawan
DIODE GEN PURP 50V 6A B-MELF
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
58626 Pieces
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung JAN1N5807US sa stock para ibenta.
- Pagpapadala pagpipilian at pagpapadala ng oras:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Mga Pagpipilian sa Pagbabayad:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Mismong para sa JAN1N5807US
Garantisado ang kalidad :
365 araw na warranty
stock Resource :
Franchised Distributor / Tagagawa Direct
Bansang pinagmulan :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi :
JAN1N5807US
tagagawa :
Microsemi Corporation
paglalarawan :
DIODE GEN PURP 50V 6A B-MELF
serye :
Military, MIL-PRF-19500/477
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
50V
Kasalukuyang - Average na Rectified (Io) :
6A
Boltahe - Ipasa (Vf) (Max) @ Kung :
875mV @ 4A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
30ns
Kasalukuyang - Reverse Leakage @ Vr :
5µA @ 50V
Capacitance @ Vr, F :
60pF @ 10V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SQ-MELF, B
Package ng Tagabigay ng Device :
B, SQ-MELF
Operating temperatura - Junction :
-65°C ~ 175°C
timbang :
-
kalagayan :
Bago at orihinal na
Mga dokumento para sa JAN1N5807US
datasheets :
JAN1N5807US.pdf
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